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| 2SC4988 Silicon NPN Epitaxial REJ03G0738-0300 (Previous ADE-208-004A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 8.5 GHz Typ * High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is "FR". *UPAK is a trademark of Renesas Technology Corp. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Collector to base voltage VCBO 15 Collector to emitter voltage VCEO 9 Emitter to base voltage VEBO 1.5 Collector current IC 100 Collector power dissipation PC 800*1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm) Unit V V V mA mW C C Rev.3.00 Aug 10, 2005 page 1 of 7 2SC4988 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 5.5 7.5 -- Typ -- -- -- -- 120 1.1 8.5 10.5 1.3 Max -- 1 1 10 250 1.6 -- -- 2.5 Unit V A mA A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00 Aug 10, 2005 page 2 of 7 2SC4988 Main Characteristics Collector Power Dissipation Curve Collector Power Dissipation Pc (mW) (on the alumina ceramic board) 1600 200 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE VCE = 5V 160 1200 120 800 80 400 40 0 0 50 100 150 200 1 2 5 10 20 50 100 Ambient Temperature Ta (C) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage 1.8 IE = 0 f = 1 MHz 1.6 12 VCE = 5 V 10 8 6 4 2 0 1 2 5 10 20 50 100 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (GHz) 1.4 1.2 1.0 0.8 0.5 1 2 5 10 20 Collector Current IC (mA) Collector to Base Voltage VCB (V) Power Gain vs. Collector Current 20 5 VCE = 5V f = 900 MHz 16 Noise Figure vs. Collector Current VCE = 5V f = 900MHz 4 Power Gain PG (dB) 12 NF (dB) Noise Figure 3 8 2 4 0 1 2 5 10 20 50 100 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 7 2SC4988 S21 Parameter vs. Collector Current 20 |S21|2 (dB) 16 VCE = 5V f = 1 GHz 12 S21 Parameter 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 7 2SC4988 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 10 .2 5 4 3 .4 .6 .8 1.5 2 -120 -90 -60 1 -150 -30 180 0 150 30 1 1.5 2 120 S21 Parameter vs. Frequency 90 Scale: 5 / div. 60 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.01 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00 Aug 10, 2005 page 5 of 7 2SC4988 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.555 0.328 0.225 0.185 0.172 0.179 0.200 0.224 0.253 0.277 ANG. -66.6 -102.5 -133.1 -160.5 170.5 148.5 131.7 120.0 108.7 99.8 MAG. 9.68 5.98 4.24 3.31 2.71 2.34 2.06 1.86 1.71 1.58 S21 ANG. 124.7 102.2 89.3 80.3 72.4 65.8 59.9 54.4 49.6 44.9 MAG. 0.0717 0.106 0.138 0.170 0.204 0.237 0.270 0.303 0.334 0.365 S12 ANG. 62.3 59.4 60.8 61.4 61.3 60.7 59.5 58.1 56.4 54.5 MAG. 0.672 0.462 0.371 0.326 0.301 0.285 0.276 0.268 0.262 0.256 S22 ANG. -39.7 -49.8 -53.4 -56.4 -59.9 -63.6 -68.2 -73.2 -78.7 -84.7 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.220 0.135 0.120 0.132 0.155 0.174 0.196 0.225 0.246 0.267 ANG. -101.8 -149.0 175.1 148.0 129.6 117.3 105.5 97.8 92.0 84.5 MAG. 13.13 7.08 4.83 3.70 3.02 2.58 2.26 2.04 1.86 1.72 S21 ANG. 106.0 90.8 82.2 75.5 69.5 63.9 58.8 54.1 50.0 45.7 MAG. 0.0532 0.0946 0.137 0.178 0.220 0.258 0.296 0.331 0.364 0.397 S12 ANG. 71.5 73.6 72.6 70.8 68.2 65.6 62.9 60.3 57.5 54.7 MAG. 0.401 0.277 0.239 0.221 0.212 0.205 0.201 0.197 0.193 0.190 S22 ANG. -48.6 -49.0 -50.1 -53.4 -57.9 -63.1 -69.1 -75.7 -82.1 -89.4 Rev.3.00 Aug 10, 2005 page 6 of 7 2SC4988 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SC4988FRTL-E Quantity 1000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Rev.3.00 Aug 10, 2005 page 7 of 7 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) 1 2.5 0.1 4.25 Max 0.4 1.8 Max 1.5 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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